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Results 1 to 25 of 308

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Surface characterizationMCGUIRE, G. E.Analytical chemistry (Washington, DC). 1987, Vol 59, Num 12, pp 294R-308R, issn 0003-2700Article

Junction formation and poly-Si doping for scaled sub-micron CMOS technologyOSBURN, C. M; CHEVACHAROENKUL, S; MCGUIRE, G. E et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 8, pp 2287-2298, issn 0013-4651Conference Paper

International conference on metallurgical coatings and thin filmsSARTWELL, B. D; MCGUIRE, G. E; HOFMANN, S et al.Surface & coatings technology. 1992, Vol 54-55, Num 1-3, issn 0257-8972, XXV, XXVII, 355-617 [266 p.], 2Conference Proceedings

International conference on metallurgical coatings and thin filmsSARTWELL, B. D; MCGUIRE, G. E; HOFMANN, S et al.Thin solid films. 1992, Vol 220, Num 1-2, issn 0040-6090Conference Proceedings

Modern developments in coatings characterization and microanalysis involving electron and ion beam applications = Développements dans la caractérisation et la microanalyse des revêtements mettant en jeu des électrons et des faisceaux d'ionsMCGUIRE, G. E; MURR, L. E.Thin solid films. 1983, Vol 108, Num 1, pp 47-59, issn 0040-6090Article

Atomic-scale friction measurements of silver and chemisorbed oxygen surfacesMAK, C; DALY, C; KRIM, J et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 190-193, issn 0040-6090Conference Paper

Characterization of TiO2/SiO2 multilayers by high resolution transmission electron microscopy and electron energy loss spectroscopyYU-ZHANG, K; BOISJOLLY, G; RIVORY, J et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 299-302, issn 0040-6090Conference Paper

Comparison of chemical vapor deposition of TiN using tetrakis-diethylamino-titanium and tetrakis-dimethylamino-titaniumSUN, S. C; TSAI, M. H.Thin solid films. 1994, Vol 253, Num 1-2, pp 440-444, issn 0040-6090Conference Paper

Electrical and structural properties of buried CoSi2 layers in Si(100) grown by molecular beam allotaxyDOLLE, M; GASSIG, U; BAY, H. L et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 485-489, issn 0040-6090Conference Paper

Non-alloyed, refractory metal contact optimization with shallow implantations of Zn and MgLOVEJOY, M. L; ZOLPER, J. C; SHERWIN, M. E et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 496-500, issn 0040-6090Conference Paper

Numerical ellipsometry : enhancement of new algorithms for real-time, in situ film growth monitoringURBAN, F. K; COMFORT, J. C.Thin solid films. 1994, Vol 253, Num 1-2, pp 262-268, issn 0040-6090Conference Paper

Plastic deformation in atomic size contactsAGRAÏT, N; RODRIGO, J. G; RUBIO, G et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 199-203, issn 0040-6090Conference Paper

Preparation of conductive ZnO:Al films by a facing target system with a strong magnetic fieldTOMINAGA, K; KATAOKA, M; UEDA, T et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 9-13, issn 0040-6090Conference Paper

Thickness dependence of the properties and thermal stability of PtSi filmsDAS, S. R; SHEERGAR, K; XU, D.-X et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 467-472, issn 0040-6090Conference Paper

A contact model for poisson-base spreading resistance correction schemes incorporating Schottky barrier and pressure effectsCLARYSS, T; VANDERVORST, W.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 413-420, issn 0734-211XConference Paper

Arsenic passivation of silicon by photo-assisted metalorganic vapor-phase epitaxy : Fourth topical conference on microphysics of surfaces : beam-induced processes, 11-13 Febrary 1991, Santa Fe, New Mexico, USARODWAY, D. C; MACKEY, K. J; SMITH, P. C et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 235-238, issn 0734-211XConference Paper

Deep submicron contact fabrication by electron beam direct writing with intraproximity effect correctionHASHIMOTO, K; MISAKA, A; NOMURA, N et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 122-125, issn 0734-211XConference Paper

Electrical characterization of pseudomorphic GaAs/InGaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs modulation doped field effect transistor-type heterostructures grown by molecular-beam epitaxyBAETA MOREIRA, M. V; PY, M. A; GAILHANOU, M et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 103-109, issn 0734-211XConference Paper

Fabrication of 50 nm line-and-space x-ray masks in thick Au using a 50 keV electron beam systemCHU, W; SMITH, H. I; RISHTON, S. A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 118-121, issn 0734-211XConference Paper

Filling of contacts and interconnects with Cu under XeCl excimer laser irradiationSHI-QING WANG; ONG, E.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 160-165, issn 0734-211XConference Paper

Identification of the facet planes of phase I TiO2(001) rutile by scanning tunnelling microscopy and low energy electron diffractionPOIRIER, G. E; HANCE, B. H; WHITE, J. M et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 6-15, issn 0734-211XConference Paper

Internal structure and two-dimensional order of monolayer C60 molecules on gold substrateCHEN, T; HOWELLS, S; GALLAGHER, M et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 170-174, issn 0734-211XConference Paper

Particle contamination on a silicon substrate in a SF6/Ar plasmaSMADI, M. M; KONG, G. Y; CARLILE, R. N et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 30-36, issn 0734-211XConference Paper

Photoionization of sputtered neutrals for reliabel and sensitive depth profilesBECKER, C. H; MACKAY, S. G; WELKIE, D. G et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 380-384, issn 0734-211XConference Paper

Platinum silicide junction spiking in arsenic doped polysilicon transistorsGRIVNA, G; KIRCHGESSNER, J; CARLSON, J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 53-59, issn 0734-211XConference Paper

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